PDN target impedance, from scratch.
TL;DR
- The PDN’s job: keep the rail impedance below a target Ztarget across frequency so transient current draw doesn’t move the voltage past its ripple budget.
- Ztarget = (Vrail × ripple%) / Itransient. Everything else — how many caps, which values — flows from this one number.
- You don’t need every decade flat. You need it below Ztarget from DC up to where the on-die capacitance takes over (often ~tens to low-hundreds of MHz).
Why a target impedance at all
A digital load draws current in bursts. By Ohm’s law, a burst ΔI through the PDN impedance Z makes a voltage wobble ΔV = ΔI × Z. If that wobble exceeds the rail’s tolerance, the chip misbehaves. So the design rule is simply: keep Z below the value that turns the worst-case ΔI into an acceptable ΔV. That value is the target impedance.
Deriving Z_target
From the datasheet you need two things: the rail voltage and its allowed ripple (often ±3% or ±5%), and the worst-case transient current step (sometimes given directly, otherwise estimate it as a fraction — 50% is a common starting assumption — of max current).
Worked example — a 0.9 V core rail, ±5% ripple, drawing a 10 A transient step:
4.5 mΩ is aggressive — it tells you immediately this rail needs many low-ESL ceramics plus a solid plane pair, not three 0.1 µF caps. That’s the value of computing it first: it sets the ambition before you place a single capacitor.
The frequency span that matters
You must stay under Ztarget from DC up to the frequency where the package and on-die decoupling take over. Below ~1 kHz the VRM holds the rail. From there to ~tens of MHz, board capacitors and the plane do the work. Above that, only on-package/on-die capacitance is fast enough — the board can’t help, so don’t chase it.
Choosing the decoupling network
Each capacitor is a series RLC: it only looks capacitive below its self-resonant frequency (SRF), set by its capacitance and parasitic inductance (ESL). Above SRF it’s inductive and useless for decoupling. So you build a network whose members’ SRFs tile the band:
- Bulk (10–100 µF) handles low frequency near the VRM.
- Mid (0.1–1 µF) covers the MHz region.
- High-frequency (1–100 nF, smallest body, lowest ESL) placed right at the BGA balls.
The trap is anti-resonance: between two cap values, the inductance of one resonates with the capacitance of the next, creating an impedance peak that can punch above Ztarget. Damp it by choosing values closer together, adding a controlled-ESR cap, or relying on plane capacitance. This is exactly what an AC PDN simulation reveals — and what a “0.1 µF everywhere” copy-paste hides.
The number of capacitors isn’t the spec. The impedance profile is. Caps are just how you shape it.
The PDN checklist
- ☐ Compute Ztarget from V, ripple%, and ΔI before placing caps
- ☐ Identify the frequency band the board can actually influence
- ☐ Tile the band with bulk / mid / HF capacitor SRFs
- ☐ Place the smallest, lowest-ESL caps closest to the power balls
- ☐ Use a tight power/ground plane pair for plane capacitance
- ☐ Check for anti-resonance peaks (AC PDN sim) and damp them
- ☐ Confirm DC IR-drop leaves margin at the far-end load
Want it verified?
PDN design & power integrity is one of our core services — DC IR-drop, AC impedance, and resonance, coupled with thermal in TRM. Scope a project.
References
- Larry Smith & Eric Bogatin, Principles of Power Integrity for PDN Design.
- Istvan Novak, PDN resonance and decoupling papers (DesignCon).
- Vendor PDN tools (target-impedance method) — TI, Intel, AMD app notes.
- IPC-2152 (current density), IPC-2221 (spacing) for the DC path.