Impedance-controlled stackup
Per-layer dielectric/copper plan that actually hits 50 Ω SE and 100 Ω diff, confirmed against your fab’s process.
DDR5 at 6400 MT/s. PCIe Gen 5. 100G SerDes. We route the hard interfaces with controlled impedance, matched skew, and pre-layout SI — and we prove it with measured eye diagrams.
Per-layer dielectric/copper plan that actually hits 50 Ω SE and 100 Ω diff, confirmed against your fab’s process.
Fly-by for DDR, point-to-point for SerDes, with the right series/parallel termination and Vtt strategy.
Byte-lane and pair matching to spec, with intra-pair skew minimized at the via and the BGA escape.
Channel sims for the critical nets; we tune trace geometry before we commit copper, not after the re-spin.
A vendor design topped out at DDR5-4800 and the team couldn’t find why. We were brought in to diagnose and re-spin.
Re-tuned stackup, back-drilled the offending vias, re-matched at the escape. Trained at full 6400 MT/s on first article; eye height improved 38%.
Both. We run pre-layout channel sims to set geometry, then post-layout to confirm. For sign-off-grade SI (full IBIS-AMI, compliance masks) we partner or scope it explicitly.
Altium Designer primarily; Orcad and Mentor Xpedition on request. We deliver native + fabrication outputs.
For a known-good schematic, often yes — the RFQ scoper flags rush feasibility instantly.
Senior EEs on every high-speed net. Fixed-fee band in 60 seconds.